Funding

Self-funded

Project code

SEM10430526

Start dates

October, February and April

Application deadline

Applications accepted all year round

Applications are invited for a self-funded, 3 year full-time or 6 year part-time PhD project.

TThe PhD will be based in  the School of Electrical and Mechanical Engineering and supervised by Dr Mahsa Mehrad.

The work on this project will involve:

 

  • Developing and optimising wide-bandgap CMOS power devices using GaN and AlGaN materials.
  • Analysing simulation and modelling results to uncover relationships between device parameters and circuit performance.
  • Applying AI-enabled methods to predict optimal design parameters and guide the co-optimization of pull-up and pull-down devices.

 

 

The transition to energy-efficient technologies, including electric vehicles, renewable energy systems, and smart power grids, requires high-performance power electronic devices capable of operating at high voltages and frequencies with minimal losses. Wide-bandgap semiconductors such as Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) offer exceptional electrical performance, including high breakdown voltage, fast switching speed, and excellent efficiency. These properties make them ideal candidates for next-generation CMOS power devices. However, designing wide-bandgap CMOS circuits remains a major challenge. One of the key difficulties is that pull-up and pull-down devices must be closely matched to ensure correct logic operation, while other challenges include device reliability, and integration complexity.

This project will develop AI-enabled methods to address these challenges, combining physics-based simulations with machine learning and multi-objective optimization techniques. Machine learning will analyze data to uncover complex relationships electrical parameters and circuit performance. 

This project is interdisciplinary, combining semiconductor device physics, electronic engineering, computational modeling, and artificial intelligence. It offers opportunities to publish research in high-impact journals, present at international conferences, and collaborate with leading experimental and industrial partners working on wide-bandgap power electronics.

 

Fees and funding

Visit the research subject area page for fees and funding information for this project.

Funding availability: Self-funded PhD students only. 

PhD full-time and part-time courses are eligible for the UK Government Doctoral Loan (UK and EU students only).

 

Bench fees

Some PhD projects may include additional fees – known as bench fees – for equipment and other consumables, and these will be added to your standard tuition fee. Speak to the supervisory team during your interview about any additional fees you may have to pay. Please note, bench fees are not eligible for discounts and are non-refundable.

Entry requirements

You'll need a good first degree from an internationally recognised university (minimum upper second class or equivalent, depending on your chosen course) or a master’s degree in electrical engineering, Electronic Engineering, Semiconductor Devices, Computer Science, Materials Science, Physics, or a related area. In exceptional cases, we may consider equivalent professional experience and/or Qualifications. English language proficiency at a minimum of IELTS band 6.5 with no component score below 6.0.

 

 

  • A strong academic background in the related field.
  • Knowledge of semiconductor device physics, especially wide-bandgap (e.g., GaN, AlGaN).
  • Experience with numerical simulation tools is highly desirable.
  • Familiarity with electrical characterisation techniques is an advantage.
  • Interest or experience in machine learning / AI methods for modelling, optimisation, or data analysis.
  • Strong analytical skills and the ability to interpret complex physical phenomena.
  • Ability to work independently and as part of a multidisciplinary research team.
  • Good written and spoken communication skills for writing reports, publishing research findings, and presenting at conferences.

 

 

How to apply

We’d encourage you to contact Dr Mahsa Mehrad (mahsa.mehrad@port.ac.uk) to discuss your interest before you apply, quoting the project code.

 

When you are ready to apply, please follow the 'Apply now' link on the Electronic Engineering PhD subject area page and select the link for the relevant intake. Make sure you submit a personal statement, proof of your degrees and grades, details of two referees, proof of your English language proficiency and an up-to-date CV.  Our ‘How to Apply’ page offers further guidance on the PhD application process.

If you want to be considered for this self-funded PhD opportunity you must quote project code SEM10430526 when applying.